NOVOSENSE's half-bridge gate driver specially designed for E-mode GaNs can be used to directly drive E-mode GaNs without the need for peripheral circuits such as resistors, capacitors and voltage regulators. With a simplified system design as well as high reliability, high common-mode immunity and low propagation delay, they are suitable for various high-frequency, high-power-density GaN applications.
show 2 devices
| Part Number | ECAD Model | Drive Object | Peak Drive Current (A) | Output Channel | Bus Voltage (v) | VCC MAX (V) | Propagation Delay (Max) ton/off(ns) | Delay matching (ns) | Features | Operating Temperature (°C) | Qualification | Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| NSD2621A-DQAGR |
|
GaNFET | 2/-4 | 2 | 700 | 24 | 60/60 | 10 | UVLO, Programmable dead time, Enable, Integrated LDO | -40~125 | Industrial | QFN15 |
| NSD2621C-DQAGR |
|
GaNFET | 2/-4 | 2 | 700 | 24 | 60/60 | 10 | UVLO, Programmable dead time, Enable, Integrated LDO | -40~125 | Industrial | QFN15 |
